Technology evolution for silicon nano-electronics (Record no. 146338)
[ view plain ]
000 -LEADER | |
---|---|
fixed length control field | 05576nam a2200433 a 4500 |
001 - CONTROL NUMBER | |
control field | 0000157190 |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20171002062735.0 |
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS | |
fixed length control field | m u |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
fixed length control field | cr cn||||||||| |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 110630s2011 sz a sb 101 0 eng d |
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER | |
Canceled/invalid LC control number | 2011377587 |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
Canceled/invalid ISBN | 3037850515 |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
Canceled/invalid ISBN | 9783037850510 |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
Canceled/invalid ISBN | 9783038134947 (e-book) |
035 ## - SYSTEM CONTROL NUMBER | |
System control number | (CaPaEBR)ebr10604254 |
035 ## - SYSTEM CONTROL NUMBER | |
System control number | (OCoLC)815479314 |
040 ## - CATALOGING SOURCE | |
Original cataloging agency | CaPaEBR |
Transcribing agency | CaPaEBR |
050 14 - LIBRARY OF CONGRESS CALL NUMBER | |
Classification number | TK7874.84 |
Item number | .I58 2011eb |
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER | |
Classification number | 621.3815 |
Edition number | 23 |
111 2# - MAIN ENTRY--MEETING NAME | |
Meeting name or jurisdiction name as entry element | International Symposium on Technology Evolution for Silicon Nano-Electronics |
Date of meeting | (2010 : |
Location of meeting | Tokyo Institute of Technology) |
245 10 - TITLE STATEMENT | |
Title | Technology evolution for silicon nano-electronics |
Medium | [electronic resource] : |
Remainder of title | selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan / |
Statement of responsibility, etc. | edited by Seiichi Miyazaki and Hitoshi Tabata. |
246 30 - VARYING FORM OF TITLE | |
Title proper/short title | Proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics |
246 30 - VARYING FORM OF TITLE | |
Title proper/short title | International Symposium on Technology Evolution for Silicon Nano-Electronics |
260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
Place of publication, distribution, etc. | Stafa-Zurich, Switzerland ; |
-- | Enfield, N.H. : |
Name of publisher, distributor, etc. | Trans Tech Publications, |
Date of publication, distribution, etc. | c2011. |
300 ## - PHYSICAL DESCRIPTION | |
Extent | xi, 234 p. : |
Other physical details | ill. |
440 #0 - SERIES STATEMENT/ADDED ENTRY--TITLE | |
Title | Key engineering materials, |
International Standard Serial Number | 1013-9826 ; |
Volume/sequential designation | v. 470 |
504 ## - BIBLIOGRAPHY, ETC. NOTE | |
Bibliography, etc. note | Includes bibliographical references and indexes. |
505 0# - FORMATTED CONTENTS NOTE | |
Formatted contents note | High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory -- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors -- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator -- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering -- Resistive Memory Utilizing Ferritin Protein with Nano Particle -- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation -- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction -- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface -- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process -- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation -- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction -- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures -- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application -- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices -- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) -- Structural Change during the Formation of Directly Bonded Silicon Substrates -- Microscopic Structure of Directly Bonded Silicon Substrates -- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains -- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications -- Influences of Carrier Transport on Drain-Current Variability of MOSFETs -- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers -- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors -- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs -- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction -- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs -- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors -- Interconnect Design Challenges in Nano CMOS Circuit. |
533 ## - REPRODUCTION NOTE | |
Type of reproduction | Electronic reproduction. |
Place of reproduction | Palo Alto, Calif. : |
Agency responsible for reproduction | ebrary, |
Date of reproduction | 2011. |
Note about reproduction | Available via World Wide Web. |
-- | Access may be limited to ebrary affiliated libraries. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name entry element | Nanoelectronics |
Form subdivision | Congresses. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name entry element | Nanostructured materials |
Form subdivision | Congresses. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name entry element | Metal oxide semiconductors |
Form subdivision | Congresses. |
655 #7 - INDEX TERM--GENRE/FORM | |
Genre/form data or focus term | Electronic books. |
Source of term | local |
700 1# - ADDED ENTRY--PERSONAL NAME | |
Personal name | Miyazaki, Seiichi. |
700 1# - ADDED ENTRY--PERSONAL NAME | |
Personal name | Tabata, Hitoshi. |
710 2# - ADDED ENTRY--CORPORATE NAME | |
Corporate name or jurisdiction name as entry element | ebrary, Inc. |
856 40 - ELECTRONIC LOCATION AND ACCESS | |
Uniform Resource Identifier | <a href="http://site.ebrary.com/lib/daystar/Doc?id=10604254">http://site.ebrary.com/lib/daystar/Doc?id=10604254</a> |
Public note | An electronic book accessible through the World Wide Web; click to view |
908 ## - PUT COMMAND PARAMETER (RLIN) | |
Put command parameter | 170314 |
942 00 - ADDED ENTRY ELEMENTS (KOHA) | |
Koha item type | Electronic Book |
No items available.