MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen.

By: Contributor(s): Material type: TextTextSeries: Linköping studies in science and technology. Dissertations ; ; Number 1662.Publisher: Linköping, Sweden : Linköping University, 2015Copyright date: ©2015Description: 1 online resource (81 pages) : illustrations (some color)Content type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9789175190730 (ebook)
Subject(s): Genre/Form: DDC classification:
  • 621.38152 23
LOC classification:
  • TK7871.85 .C446 2015eb
Online resources:
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