MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen.

By: Contributor(s): Material type: TextTextSeries: Linkoping studies in science and technology. Dissertations ; ; Number 1662.Publisher: Linkoping, Sweden : Linkoping University, 2015Copyright date: 2015Description: 1 online resource (81 pages) : illustrations (some color)Content type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9789175190730
Subject(s): Genre/Form: DDC classification:
  • 621.38152 23
LOC classification:
  • TK7871.85 .C446 2015
Online resources:
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Includes bibliographical references.

Description based on online resource; title from PDF title page (ebrary, viewed May 5, 2015).

Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.

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