Chen, Jr-Tai, <br/><br/>
MOCVD growth of GaN-based high electron mobility transistor structures / 
Jr-Tai Chen. 
 - 1 online resource (81 pages) :  illustrations (some color). 
 - Linkoping Studies in Science and Technology Dissertations,  Number 1662  0345-7524 ; .
 - Linkoping studies in science and technology.  Dissertations ;  Number 1662. .
<br/><br/>Includes bibliographical references. 
<br/><br/><label>ISBN: </label>9789175190730 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Semiconductors--Materials.<br/>Epitaxy.
<br/><br/><label>Index Terms--Genre/Form: </label><br/>Electronic books.
<br/><br/><label>LC Class. No.: </label>TK7871.85  / .C446 2015 
<br/><br/><label>Dewey Class. No.: </label>621.38152