000 | 01582nam a2200373 a 4500 | ||
---|---|---|---|
001 | 0000164242 | ||
005 | 20171002063202.0 | ||
006 | m o u | ||
007 | cr cn||||||||| | ||
008 | 110316s2011 enka sb 001 0 eng d | ||
010 | _z 2011008131 | ||
020 | _z9781848212312 (hc) | ||
020 | _z1848212313 | ||
020 | _z9781118601112 (e-book) | ||
035 | _a(CaPaEBR)ebr10660607 | ||
035 | _a(OCoLC)828672185 | ||
040 |
_aCaPaEBR _cCaPaEBR |
||
050 | 1 | 4 |
_aTK7871.85 _b.S5485 2011eb |
082 | 0 | 4 |
_a621.3815/2 _222 |
245 | 0 | 0 |
_aSilicon technologies _h[electronic resource] : _bion implantation and thermal treatment / _cedited by Annie Baudrant. |
260 |
_aLondon : _bISTE ; _aHoboken, N.J. : _bWiley, _c2011. |
||
300 |
_axvii, 337 p. : _bill. |
||
504 | _aIncludes bibliographical references and index. | ||
520 | _aThe main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion. | ||
533 |
_aElectronic reproduction. _bPalo Alto, Calif. : _cebrary, _d2015. _nAvailable via World Wide Web. _nAccess may be limited to ebrary affiliated libraries. |
||
650 | 0 | _aSemiconductor doping. | |
650 | 0 | _aIon implantation. | |
650 | 0 |
_aSemiconductors _xHeat treatment. |
|
655 | 7 |
_aElectronic books. _2local |
|
700 | 1 | _aBaudrant, Annie. | |
710 | 2 | _aebrary, Inc. | |
856 | 4 | 0 |
_uhttp://site.ebrary.com/lib/daystar/Doc?id=10660607 _zAn electronic book accessible through the World Wide Web; click to view |
908 | _a170314 | ||
942 | 0 | 0 | _cEB |
999 |
_c153388 _d153388 |