000 01582nam a2200373 a 4500
001 0000164242
005 20171002063202.0
006 m o u
007 cr cn|||||||||
008 110316s2011 enka sb 001 0 eng d
010 _z 2011008131
020 _z9781848212312 (hc)
020 _z1848212313
020 _z9781118601112 (e-book)
035 _a(CaPaEBR)ebr10660607
035 _a(OCoLC)828672185
040 _aCaPaEBR
_cCaPaEBR
050 1 4 _aTK7871.85
_b.S5485 2011eb
082 0 4 _a621.3815/2
_222
245 0 0 _aSilicon technologies
_h[electronic resource] :
_bion implantation and thermal treatment /
_cedited by Annie Baudrant.
260 _aLondon :
_bISTE ;
_aHoboken, N.J. :
_bWiley,
_c2011.
300 _axvii, 337 p. :
_bill.
504 _aIncludes bibliographical references and index.
520 _aThe main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.
533 _aElectronic reproduction.
_bPalo Alto, Calif. :
_cebrary,
_d2015.
_nAvailable via World Wide Web.
_nAccess may be limited to ebrary affiliated libraries.
650 0 _aSemiconductor doping.
650 0 _aIon implantation.
650 0 _aSemiconductors
_xHeat treatment.
655 7 _aElectronic books.
_2local
700 1 _aBaudrant, Annie.
710 2 _aebrary, Inc.
856 4 0 _uhttp://site.ebrary.com/lib/daystar/Doc?id=10660607
_zAn electronic book accessible through the World Wide Web; click to view
908 _a170314
942 0 0 _cEB
999 _c153388
_d153388